| Mfr. No: | SCT2750NYTB |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide |
| Datasheet: | SCT2750NYTB Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 975mOhm @ 1.7A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 630µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-268 |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Alternate Packaging | |
| Suggested Replacement | SCT2750NWCTL1 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SCT2750NYTB, made by ROHM Semiconductor, belongs to the sic mosfets product category. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 5.9A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 975mOhm @ 1.7A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SCT2750NYTB for same-day shipping with genuine parts guaranteed.