| Mfr. No: | SCT4018KTWHRTCR |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V, 79A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 23.4mOhm @ 42A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 22.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 4532 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 3-USON (1.1x1) |
| Package / Case | 3-PowerUDFN |
| Packaging | Reel |
| Standard Pack Qty | 600 |
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
SCT4018KTWHRTCR is a sic mosfets component manufactured by ROHM Semiconductor. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 79A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 23.4mOhm @ 42A, 18V. This part has a typical lead time of 189 Days from factory. Simplytronix offers SCT4018KTWHRTCR in stock, verified authentic and ready for same-day dispatch.