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SCT4050KWATL ROHM Semiconductor
*For representation only.

SCT4050KWATL

Mfr. No: SCT4050KWATL
Mfr.: ROHM Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V, 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 29A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.8V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 18 V
Vgs (Max) +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1703 pF @ 800 V
FET Feature -
Power Dissipation (Max) 115W
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7LA
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,235
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS
Lifecycle New Product
Lead Time 189 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SCT4050KWATL from ROHM Semiconductor falls under the sic mosfets category. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 29A (Tj), drive voltage: 18V and rds on (max) @ id, vgs: 65mOhm @ 15A, 18V. This part has a typical lead time of 189 Days from factory. SCT4050KWATL is available through Simplytronix, sourced and verified for authenticity.

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