| Mfr. No: | SH8K51GZETB |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 35V Nch+Nch Power MOSFET |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Power - Max | 1.4W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ROHM Semiconductor manufactures the SH8K51GZETB, a mosfets part used in electronic assemblies. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 35V, current, continuous drain (id) @ 25°C: 4A (Ta) and rds on (max) @ id, vgs: 58mOhm @ 4A, 10V. This part has a typical lead time of 112 Days from factory. You can source SH8K51GZETB through Simplytronix, with fast shipping and verified authenticity.