| Mfr. No: | SDS120J030G2-ISATH |
| Mfr.: | Sanan Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 30A, TO247-3L, Industrial Grade |
| Lifecycle: | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 37A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3L |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541100000 |
| ECCN | EAR99 |
The SDS120J030G2-ISATH from Sanan Semiconductor falls under the sic mosfets category. Notable characteristics of this part include diode configuration: 1 Pair Common Cathode, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified (io): 37A, voltage, forward (vf) (max) @ if: 1.8 V @ 15 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory. SDS120J030G2-ISATH is available through Simplytronix, sourced and verified for authenticity.
