| Mfr. No: | GCMX005A170S3B1-N |
| Mfr.: | SemiQ |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1700V, 5mohm SiC MOSFET Module, S3 Half Bridge |
| Lifecycle: | Active |
| Datasheet: | GCMX005A170S3B1-N Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 397A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 200A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 120mA |
| Gate Charge (Qg) (Max) @ Vgs | 1416nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 43600pF @ 1200V |
| Power - Max | 2113W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | Bulk |
| Standard Pack Qty | 15 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
GCMX005A170S3B1-N is a mosfet modules component manufactured by SemiQ. This part is specified with technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1700V (1.7kV), current, continuous drain (id) @ 25°C: 397A (Tc) and rds on (max) @ id, vgs: 7mOhm @ 200A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GCMX005A170S3B1-N in stock, verified authentic and ready for same-day dispatch.