*For representation only.
GCMX020B120S1-E1
| Mfr. No: | GCMX020B120S1-E1 |
| Mfr.: | SemiQ |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 113A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 216 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5349 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 395W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
5,279
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 21 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
The GCMX020B120S1-E1, made by SemiQ, belongs to the mosfet modules product category. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 113A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 28mOhm @ 50A, 20V. This part has a typical lead time of 21 Days from factory. Simplytronix stocks GCMX020B120S1-E1 for same-day shipping with genuine parts guaranteed.
