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GCMX080A120B2H1P SemiQ
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GCMX080A120B2H1P

Mfr. No: GCMX080A120B2H1P
Mfr.: SemiQ
Category: MOSFET Modules
Description: MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
Lifecycle: Active
Datasheet: GCMX080A120B2H1P Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 1362pF @ 800V
Power - Max 119W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Reel
Standard Pack Qty 40
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,520
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

GCMX080A120B2H1P is a mosfet modules component manufactured by SemiQ. Key specifications include technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 27A (Tc) and rds on (max) @ id, vgs: 100mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GCMX080A120B2H1P in stock, verified authentic and ready for same-day dispatch.

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