| Mfr. No: | GCMS010B120S1-E1 |
| Mfr.: | SemiQ |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V SBD Module, 9mohm COPACK, SOT-227 |
| Lifecycle: | Active |
| Datasheet: | GCMS010B120S1-E1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 416 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10878 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 652W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New at Mouser |
| Lead Time | 0 Days (from factory) |
As a mosfet modules component, the GCMS010B120S1-E1 is manufactured and supplied by SemiQ. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 204A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 14mOhm @ 100A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries GCMS010B120S1-E1 in stock, backed by a genuine parts guarantee and quick dispatch.