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GCMS080B120S1-E1 SemiQ
*For representation only.

GCMS080B120S1-E1

Mfr. No: GCMS080B120S1-E1
Mfr.: SemiQ
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
Lifecycle: Active
Datasheet: GCMS080B120S1-E1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1374 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 142W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,613
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
ℹ Product Overview

GCMS080B120S1-E1 is a discrete semiconductor modules component manufactured by SemiQ. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 30A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 100mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GCMS080B120S1-E1 in stock, verified authentic and ready for same-day dispatch.

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