*For representation only.
GCMS2P0B120S4B1-N
| Mfr. No: | GCMS2P0B120S4B1-N |
| Mfr.: | SemiQ |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules Gen3 1200V 2mO SiC MOSFET & SBD Half Bridge Module, 62mm |
| Lifecycle: | Active |
| Datasheet: | GCMS2P0B120S4B1-N Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 719A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 350A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 140mA |
| Gate Charge (Qg) (Max) @ Vgs | 1825nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 52300pF @ 800V |
| Power - Max | 1847W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2 |
10,817
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
The GCMS2P0B120S4B1-N from SemiQ falls under the mosfet modules category. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 719A (Tc) and rds on (max) @ id, vgs: 3.2mOhm @ 350A, 18V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. GCMS2P0B120S4B1-N is available through Simplytronix, sourced and verified for authenticity.
