*For representation only.
GCMX010A120B3B1P
| Mfr. No: | GCMX010A120B3B1P |
| Mfr.: | SemiQ |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 173A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800pF @ 800V |
| Power - Max | 577W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 40 |
8,499
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
GCMX010A120B3B1P is a mosfet modules part produced by SemiQ for use across a range of applications. Key specifications include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 173A (Tc) and rds on (max) @ id, vgs: 14mOhm @ 100A, 20V. This part has a typical lead time of 0 Days from factory. Order GCMX010A120B3B1P from Simplytronix for authenticated stock and same-day order processing.
