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GCMX020A120B2B1P SemiQ
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GCMX020A120B2B1P

Mfr. No: GCMX020A120B2B1P
Mfr.: SemiQ
Category: MOSFET Modules
Description: MOSFET Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
Lifecycle: Active
Datasheet: GCMX020A120B2B1P Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Rds On (Max) @ Id, Vgs 28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 241nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 800V
Power - Max 385W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Reel
Standard Pack Qty 40
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,028
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 15 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SemiQ manufactures the GCMX020A120B2B1P, a mosfet modules part used in electronic assemblies. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 102A (Tc) and rds on (max) @ id, vgs: 28mOhm @ 50A, 20V. This part has a typical lead time of 15 Days from factory and ships with a full manufacturer datasheet available for download. You can source GCMX020A120B2B1P through Simplytronix, with fast shipping and verified authenticity.

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