*For representation only.
GCMX020A120B2T1P
| Mfr. No: | GCMX020A120B2T1P |
| Mfr.: | SemiQ |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V 20ohm SiC MOSFET Six-Pack Module |
| Lifecycle: | Active |
| Datasheet: | GCMX020A120B2T1P Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 40A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 235nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 800V |
| Power - Max | 263W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 10 |
10,241
Units In Stock
📦 Tray
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Test report available upon request —
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Product Overview
Manufactured by SemiQ, the GCMX020A120B2T1P is classified under mosfet modules. This component is defined by technology: Silicon Carbide (SiC), configuration: 6 N-Channel (3-Phase Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 30A (Tc) and rds on (max) @ id, vgs: 25mOhm @ 40A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get GCMX020A120B2T1P from Simplytronix, shipped same day with a genuine parts guarantee.
