| Mfr. No: | GHXS030A120S-D1E |
| Mfr.: | SemiQ |
| Category: | Diode Modules |
| Description: | Diode Modules SiC SBD Rectifier Bridge Power Module 1200V 30A |
| Lifecycle: | Active |
| Datasheet: | GHXS030A120S-D1E Datasheet (PDF) |
| Diode Type | Single Phase |
| Technology | Silicon Carbide Schottky |
| Voltage - Peak Reverse (Max) | 1.2 kV |
| Current - Average Rectified (Io) | 30 A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | Diode Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541590000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
GHXS030A120S-D1E is a diode modules component manufactured by SemiQ. Key specifications include diode type: Single Phase, technology: Silicon Carbide Schottky, voltage, peak reverse: 1.2 kV, current, average rectified: 30 A, voltage, forward (vf) (max) @ if: 1.7 V @ 30 A and current, reverse leakage @ vr: 200 µA @ 1200 V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GHXS030A120S-D1E in stock, verified authentic and ready for same-day dispatch.