| Mfr. No: | GHXS030A120S-D3 |
| Mfr.: | SemiQ |
| Category: | Diode Modules |
| Description: | Diode Modules SiC SBD Parallel Power Module 1200V 30A |
| Lifecycle: | Active |
| Datasheet: | GHXS030A120S-D3 Datasheet (PDF) |
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Speed | No Recovery Time > 500mA (Io) |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | Diode Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 27 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
SemiQ's GHXS030A120S-D3 is a widely used diode modules part in electronic designs. Key specifications include diode configuration: 2 Independent, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified (io): 30A, voltage, forward (vf) (max) @ if: 1.7 V @ 30 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 27 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies GHXS030A120S-D3 with same-day shipping and guaranteed authenticity.