| Mfr. No: | GHXS100B170S-D3 |
| Mfr.: | SemiQ |
| Category: | Diode Modules |
| Description: | Diode Modules SiC 1700V 100A Schottky Diode Module |
| Lifecycle: | Active |
| Datasheet: | GHXS100B170S-D3 Datasheet (PDF) |
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Current - Average Rectified (Io) (per Diode) | 214A |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 100 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 400 µA @ 1.7 kV |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | Diode Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 186 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
GHXS100B170S-D3 is a diode modules part produced by SemiQ for use across a range of applications. Key specifications include diode configuration: 2 Independent, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1700 V, current, average rectified (io): 214A, voltage, forward (vf) (max) @ if: 1.65 V @ 100 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 186 Days from factory and ships with a full manufacturer datasheet available for download. Order GHXS100B170S-D3 from Simplytronix for authenticated stock and same-day order processing.