*For representation only.
GP3T072A120H
| Mfr. No: | GP3T072A120H |
| Mfr.: | SemiQ |
| Description: | Gen3 1200V 72mO SiC MOSFET TO-247-4L |
| Lifecycle: | Active |
| Datasheet: | GP3T072A120H Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1293 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
9,177
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Product Overview
The GP3T072A120H, made by SemiQ, belongs to the component product category. Notable characteristics of this part include FET type: N-Channel, technology: SiC (Silicon Carbide Junction Transistor), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 31A (Tc), drive voltage: 18V and vgs(th) (max) @ id: 4V @ 5mA. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GP3T072A120H for same-day shipping with genuine parts guaranteed.
