| Mfr. No: | STH200N10WF7-2 |
| Mfr.: | STMicroelectronics |
| Category: | MOSFETs |
| Description: | MOSFETs N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p |
| Datasheet: | STH200N10WF7-2 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4430 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-2 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 119 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
STH200N10WF7-2 is a mosfets part produced by STMicroelectronics for use across a range of applications. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 180A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 4mOhm @ 90A, 10V. This part has a typical lead time of 119 Days from factory and ships with a full manufacturer datasheet available for download. Order STH200N10WF7-2 from Simplytronix for authenticated stock and same-day order processing.