| Mfr. No: | STPSC10H065DI |
| Mfr.: | STMicroelectronics |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V Pwr Schottky Silicn Carbide Diode |
| Lifecycle: | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Insulated, TO-220AC |
| Supplier Device Package | TO-220AC ins |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 1000 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 133 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
STMicroelectronics manufactures the STPSC10H065DI, a sic schottky diodes part used in electronic assemblies. Notable characteristics of this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.75 V @ 10 A, speed: Fast Recovery =< 500ns, > 200mA (Io) and current, reverse leakage @ vr: 100 µA @ 650 V. This part has a typical lead time of 133 Days from factory. You can source STPSC10H065DI through Simplytronix, with fast shipping and verified authenticity.