| Mfr. No: | STPSC20G12WL |
| Mfr.: | STMicroelectronics |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode |
| Lifecycle: | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 150 µA @ 1200 V |
| Capacitance @ Vr, F | 1548pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | DO-247 LL |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 600 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 175 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
The STPSC20G12WL from STMicroelectronics falls under the sic schottky diodes category. This part is specified with technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 20A, voltage, forward (vf) (max) @ if: 1.5 V @ 20 A, speed: Fast Recovery =< 500ns, > 200mA (Io) and current, reverse leakage @ vr: 150 µA @ 1200 V. This part has a typical lead time of 175 Days from factory. STPSC20G12WL is available through Simplytronix, sourced and verified for authenticity.