| Mfr. No: | STPSC30G12WL |
| Mfr.: | STMicroelectronics |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode |
| Lifecycle: | Active |
| Datasheet: | STPSC30G12WL Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 30 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 225 µA @ 1200 V |
| Capacitance @ Vr, F | 2272pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | DO-247 LL |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 600 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 175 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
STPSC30G12WL is a sic schottky diodes part produced by STMicroelectronics for use across a range of applications. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 30A, voltage, forward (vf) (max) @ if: 1.5 V @ 30 A, speed: No Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 175 Days from factory and ships with a full manufacturer datasheet available for download. Order STPSC30G12WL from Simplytronix for authenticated stock and same-day order processing.