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| Mfr. No: | GH50H65DRB2-7AG |
| Mfr.: | STMicroelectronics |
| Category: | IGBTs |
| Description: | IGBTs Automotive trench gate field-stop 650 V, 50 A high-speed IGBT freewheeling diode |
| Lifecycle: | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 108 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Power - Max | 385 W |
| Switching Energy | 557µJ (off) |
| Input Type | Standard |
| Gate Charge | 152 nC |
| Td (on/off) @ 25°C | -/117ns |
| Test Condition | 400V, 50A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | 912 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Supplier Device Package | H2PAK-7 |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 105 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541290000 |
STMicroelectronics's GH50H65DRB2-7AG is a widely used igbts part in electronic designs. Its datasheet lists IGBT type: Trench Field Stop, voltage, collector emitter breakdown: 650 V, current, collector (ic): 108 A, current, collector pulsed: 200 A, vce(on) (max) @ vge, ic: 2V @ 15V, 50A and power, max: 385 W. This part has a typical lead time of 105 Days from factory. Simplytronix supplies GH50H65DRB2-7AG with same-day shipping and guaranteed authenticity.
