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SGT070R70HTO STMicroelectronics
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SGT070R70HTO

Mfr. No: SGT070R70HTO
Mfr.: STMicroelectronics
Category: GaN FETs
Description: GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 70mOhm @ 10A, 6V
Vgs(th) (Max) @ Id 2.5V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 6 V
Vgs (Max) +7V, -6V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 400 V
FET Feature -
Power Dissipation (Max) 231W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TOLL (HV)
Package / Case 8-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,952
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 140 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

STMicroelectronics manufactures the SGT070R70HTO, a gan fets part used in electronic assemblies. Key specifications include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 26A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 70mOhm @ 10A, 6V. This part has a typical lead time of 140 Days from factory. You can source SGT070R70HTO through Simplytronix, with fast shipping and verified authenticity.

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