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ST8L65N050DM9 STMicroelectronics
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ST8L65N050DM9

Mfr. No: ST8L65N050DM9
Mfr.: STMicroelectronics
Category: MOSFETs
Description: MOSFETs N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4584 pF @ 400 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV
Package / Case 4-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,529
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 140 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

ST8L65N050DM9 is a mosfets part produced by STMicroelectronics for use across a range of applications. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 55A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 50mOhm @ 27.5A, 10V. This part has a typical lead time of 140 Days from factory. Order ST8L65N050DM9 from Simplytronix for authenticated stock and same-day order processing.

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