| Mfr. No: | STPSC10H12G2-TR |
| Mfr.: | STMicroelectronics |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200V, 10A, silicon carbide power Schottky Diode |
| Lifecycle: | Obsolete |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
| Capacitance @ Vr, F | 725pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK HV |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Alternate Packaging | |
| Suggested Replacement | STPSC10H12G2Y-TR |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
STPSC10H12G2-TR is a sic schottky diodes part produced by STMicroelectronics for use across a range of applications. Technical specifications for this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.5 V @ 10 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory. Order STPSC10H12G2-TR from Simplytronix for authenticated stock and same-day order processing.