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TQM110NB04DCR RLG Taiwan Semiconductor
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TQM110NB04DCR RLG

Mfr. No: TQM110NB04DCR RLG
Mfr.: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFETs 40V, 50A, Dual N-Channel Power MOSFET
Datasheet: TQM110NB04DCR RLG Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1354pF @ 20V
Power - Max 2.5W (Ta), 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFNU (5x6)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,515
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

TQM110NB04DCR RLG is a mosfets component manufactured by Taiwan Semiconductor. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 10A (Ta), 50A (Tc) and rds on (max) @ id, vgs: 11mOhm @ 10A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers TQM110NB04DCR RLG in stock, verified authentic and ready for same-day dispatch.

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