| Mfr. No: | TQM210NH08LDCR RLG |
| Mfr.: | Taiwan Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 80V, 33A, Dual N-Channel Automotive MOSFETs |
| Datasheet: | TQM210NH08LDCR RLG Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 639pF @ 40V |
| Power - Max | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFNU (4.9x5.75) |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
TQM210NH08LDCR RLG is a mosfets part produced by Taiwan Semiconductor for use across a range of applications. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 80V, current, continuous drain (id) @ 25°C: 8.2A (Ta), 33A (Tc) and rds on (max) @ id, vgs: 21mOhm @ 16.5A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order TQM210NH08LDCR RLG from Simplytronix for authenticated stock and same-day order processing.