*For representation only.
TSCDT08065G1
| Mfr. No: | TSCDT08065G1 |
| Mfr.: | Taiwan Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 8A, 650V, SiC Schottky Diode |
| Lifecycle: | Active |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Capacitance @ Vr, F | 39pF @ 400V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 2000 |
3,650
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
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Product Overview
Taiwan Semiconductor's TSCDT08065G1 is a widely used sic schottky diodes part in electronic designs. Notable characteristics of this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 8A, voltage, forward (vf) (max) @ if: 1.45 V @ 8 A, speed: No Recovery Time > 500mA (Io) and current, reverse leakage @ vr: 20 µA @ 650 V. This part has a typical lead time of 210 Days from factory. Simplytronix supplies TSCDT08065G1 with same-day shipping and guaranteed authenticity.
