| Mfr. No: | TSM076NH04LDCR RLG |
| Mfr.: | Taiwan Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 40V, 34A, Dual N-Channel Power MOSFET |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1344pF @ 25V |
| Power - Max | 55.6W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFNU (5x6) |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
TSM076NH04LDCR RLG is a mosfets component manufactured by Taiwan Semiconductor. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 14A (Ta), 34A (Tc) and rds on (max) @ id, vgs: 7.6mOhm @ 17A, 10V. This part has a typical lead time of 112 Days from factory. Simplytronix offers TSM076NH04LDCR RLG in stock, verified authentic and ready for same-day dispatch.