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TSM130NB06LCR RLG Taiwan Semiconductor
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TSM130NB06LCR RLG

Mfr. No: TSM130NB06LCR RLG
Mfr.: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFETs 60V, 51A, Single N-Channel Power MOSFET
Datasheet: TSM130NB06LCR RLG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2175 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5.2x5.75)
Package / Case 8-PowerLDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,787
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The TSM130NB06LCR RLG from Taiwan Semiconductor falls under the mosfets category. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 10A (Ta), 51A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 13mOhm @ 10A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. TSM130NB06LCR RLG is available through Simplytronix, sourced and verified for authenticity.

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