*For representation only.
TSM250NB06DCR RLG
| Mfr. No: | TSM250NB06DCR RLG |
| Mfr.: | Taiwan Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 60V, 30A, Dual N-Channel Power MOSFET |
| Datasheet: | TSM250NB06DCR RLG Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1461pF @ 30V |
| Power - Max | 2W (Ta), 48W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFN (5x6) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
10,305
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The TSM250NB06DCR RLG from Taiwan Semiconductor falls under the mosfets category. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 7A (Ta), 30A (Tc) and rds on (max) @ id, vgs: 25mOhm @ 7A, 10V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. TSM250NB06DCR RLG is available through Simplytronix, sourced and verified for authenticity.
