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TQM210NH08LDCR RLG Taiwan Semiconductor
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TQM210NH08LDCR RLG

Mfr. No: TQM210NH08LDCR RLG
Mfr.: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFETs 80V, 33A, Dual N-Channel Automotive MOSFETs
Datasheet: TQM210NH08LDCR RLG Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs 21mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 639pF @ 40V
Power - Max 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFNU (4.9x5.75)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,153
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

TQM210NH08LDCR RLG is a mosfets part produced by Taiwan Semiconductor for use across a range of applications. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 80V, current, continuous drain (id) @ 25°C: 8.2A (Ta), 33A (Tc) and rds on (max) @ id, vgs: 21mOhm @ 16.5A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order TQM210NH08LDCR RLG from Simplytronix for authenticated stock and same-day order processing.

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