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TSM070NB04LCR RLG Taiwan Semiconductor
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TSM070NB04LCR RLG

Mfr. No: TSM070NB04LCR RLG
Mfr.: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFETs 40V, 75A, Single N-Channel Power MOSFET
Lifecycle: Active
Datasheet: TSM070NB04LCR RLG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2151 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerLDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,081
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

TSM070NB04LCR RLG is a mosfets part produced by Taiwan Semiconductor for use across a range of applications. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 15A (Ta), 75A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 7mOhm @ 15A, 10V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Order TSM070NB04LCR RLG from Simplytronix for authenticated stock and same-day order processing.

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