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TSM950N10CW RPG Taiwan Semiconductor
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TSM950N10CW RPG

Mfr. No: TSM950N10CW RPG
Mfr.: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFETs 100V, 6.5A, Single N-Channel Power MOSFET
Datasheet: TSM950N10CW RPG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
FET Feature -
Power Dissipation (Max) 9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,182
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 168 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

TSM950N10CW RPG is a mosfets part produced by Taiwan Semiconductor for use across a range of applications. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 6.5A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 95mOhm @ 5A, 10V. This part has a typical lead time of 168 Days from factory and ships with a full manufacturer datasheet available for download. Order TSM950N10CW RPG from Simplytronix for authenticated stock and same-day order processing.

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