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CSD17579Q3AT Texas Instruments
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CSD17579Q3AT

Mfr. No: CSD17579Q3AT
Mfr.: Texas Instruments
Category: MOSFETs
Description: MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 998 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging CSD17579Q3A
Suggested Replacement CSD17579Q3A
8,900
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 42 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

CSD17579Q3AT is a mosfets part produced by Texas Instruments for use across a range of applications. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 20A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 10.2mOhm @ 8A, 10V. This part has a typical lead time of 42 Days from factory. Order CSD17579Q3AT from Simplytronix for authenticated stock and same-day order processing.

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