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CSD19532KTTT Texas Instruments
*For representation only.

CSD19532KTTT

Mfr. No: CSD19532KTTT
Mfr.: Texas Instruments
Category: MOSFETs
Description: MOSFETs 100V N-channel NexF ET Pwr MOSFET A 595- A 595-CSD19532KTT
Datasheet: CSD19532KTTT Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5060 pF @ 50 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263 (DDPAK-3)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging CSD19532KTT
Suggested Replacement CSD19532KTT
6,150
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Texas Instruments, the CSD19532KTTT is classified under mosfets. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 200A (Ta), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 5.6mOhm @ 90A, 10V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Get CSD19532KTTT from Simplytronix, shipped same day with a genuine parts guarantee.

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