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CSD19538Q2 Texas Instruments
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CSD19538Q2

Mfr. No: CSD19538Q2
Mfr.: Texas Instruments
Category: MOSFETs
Description: MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19538Q2T
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging CSD19538Q2T
Suggested Replacement CSD19538Q2T
8,235
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Texas Instruments manufactures the CSD19538Q2, a mosfets part used in electronic assemblies. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 13.1A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 59mOhm @ 5A, 10V. This part has a typical lead time of 84 Days from factory. You can source CSD19538Q2 through Simplytronix, with fast shipping and verified authenticity.

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