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CSD85312Q3E Texas Instruments
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CSD85312Q3E

Mfr. No: CSD85312Q3E
Mfr.: Texas Instruments
Category: MOSFETs
Description: MOSFETs Dual 20V N-CH Pwr MO SFETs
Datasheet: CSD85312Q3E Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Source
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 39A
Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-VSON (3.3x3.3)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,201
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854239099
KRHTS 8541299000
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
ℹ Product Overview

Manufactured by Texas Instruments, the CSD85312Q3E is classified under mosfets. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Common Source, FET feature: Logic Level Gate, 5V Drive, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 39A and rds on (max) @ id, vgs: 12.4mOhm @ 10A, 8V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Get CSD85312Q3E from Simplytronix, shipped same day with a genuine parts guarantee.

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