| Mfr. No: | CSD85312Q3E |
| Mfr.: | Texas Instruments |
| Category: | MOSFETs |
| Description: | MOSFETs Dual 20V N-CH Pwr MO SFETs |
| Datasheet: | CSD85312Q3E Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 84 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854239099 |
| KRHTS | 8541299000 |
| TARIC | 8542399000 |
| MXHTS | 8542399901 |
| ECCN | EAR99 |
Manufactured by Texas Instruments, the CSD85312Q3E is classified under mosfets. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Common Source, FET feature: Logic Level Gate, 5V Drive, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 39A and rds on (max) @ id, vgs: 12.4mOhm @ 10A, 8V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Get CSD85312Q3E from Simplytronix, shipped same day with a genuine parts guarantee.