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CSD86336Q3DT Texas Instruments
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CSD86336Q3DT

Mfr. No: CSD86336Q3DT
Mfr.: Texas Instruments
Category: MOSFETs
Description: MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3D
Datasheet: CSD86336Q3DT Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 1.9V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds 494pF @ 12.5V, 970pF @ 12.5V
Power - Max 6W
Operating Temperature -55°C ~ 125°C
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-VSON (3.3x3.3)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging CSD86336Q3D
Suggested Replacement CSD86336Q3D
11,672
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

CSD86336Q3DT is a mosfets part produced by Texas Instruments for use across a range of applications. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: Logic Level Gate, 5V Drive, drain to source voltage: 25V, current, continuous drain (id) @ 25°C: 20A (Ta) and rds on (max) @ id, vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Order CSD86336Q3DT from Simplytronix for authenticated stock and same-day order processing.

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