| Mfr. No: | 2SC5354-1(F) |
| Mfr.: | Toshiba |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Transistor NPN 800V 5A |
| Lifecycle: | Active |
| Datasheet: | 2SC5354-1(F) Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1mA, 5V |
| Power - Max | 100 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Packaging | |
| Standard Pack Qty | 50 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The 2SC5354-1(F), made by Toshiba, belongs to the transistors product category. This part is specified with transistor type: NPN, current, collector (ic): 5 A, voltage, collector emitter breakdown: 800 V, vce saturation (max) @ ib, ic: 1V @ 400mA, 2A, current, collector cutoff: 100µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 10 @ 1mA, 5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2SC5354-1(F) for same-day shipping with genuine parts guaranteed.