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HN1A01FE-GR,LXHF Toshiba
*For representation only.

HN1A01FE-GR,LXHF

Mfr. No: HN1A01FE-GR,LXHF
Mfr.: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
Datasheet: HN1A01FE-GR,LXHF Datasheet (PDF)
⚙ Specifications
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,325
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The HN1A01FE-GR,LXHF, made by Toshiba, belongs to the bipolar transistors - bjt product category. This part is specified with transistor type: 2 PNP (Dual), current, collector (ic): 150mA, voltage, collector emitter breakdown: 50V, vce saturation (max) @ ib, ic: 300mV @ 10mA, 100mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 6V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks HN1A01FE-GR,LXHF for same-day shipping with genuine parts guaranteed.

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