| Mfr. No: | HN4A06J(TE85L,F) |
| Mfr.: | Toshiba |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A |
| Lifecycle: | Active |
| Datasheet: | HN4A06J(TE85L,F) Datasheet (PDF) |
| Transistor Type | 2 PNP (Dual) Matched Pair, Common Emitter |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 300mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74A, SOT-753 |
| Supplier Device Package | SMV |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
As a transistors component, the HN4A06J(TE85L,F) is manufactured and supplied by Toshiba. Among its key specs are transistor type: 2 PNP (Dual) Matched Pair, Common Emitter, current, collector (ic): 100mA, voltage, collector emitter breakdown: 120V, vce saturation (max) @ ib, ic: 300mV @ 1mA, 10mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries HN4A06J(TE85L,F) in stock, backed by a genuine parts guarantee and quick dispatch.