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HN4A06J(TE85L,F) Toshiba
*For representation only.

HN4A06J(TE85L,F)

Mfr. No: HN4A06J(TE85L,F)
Mfr.: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Lifecycle: Active
Datasheet: HN4A06J(TE85L,F) Datasheet (PDF)
⚙ Specifications
Transistor Type 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,961
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

As a transistors component, the HN4A06J(TE85L,F) is manufactured and supplied by Toshiba. Among its key specs are transistor type: 2 PNP (Dual) Matched Pair, Common Emitter, current, collector (ic): 100mA, voltage, collector emitter breakdown: 120V, vce saturation (max) @ ib, ic: 300mV @ 1mA, 10mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries HN4A06J(TE85L,F) in stock, backed by a genuine parts guarantee and quick dispatch.

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