*For representation only.
MG600Q2YMS3(DAE)
| Mfr. No: | MG600Q2YMS3(DAE) |
| Mfr.: | Toshiba |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules SiC MOSFET Module, 1200 V, 600 A |
| Lifecycle: | Active |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 600mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 53000pF @ 600V |
| Power - Max | 2000W (Tc) |
| Operating Temperature | 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 1 |
5,206
Units In Stock
📦 Tray
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- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | 3A228.c |
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Product Overview
Toshiba's MG600Q2YMS3(DAE) is a widely used mosfet modules part in electronic designs. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 600A (Tc) and rds on (max) @ id, vgs: -. This part has a typical lead time of 0 Days from factory. Simplytronix supplies MG600Q2YMS3(DAE) with same-day shipping and guaranteed authenticity.
