| Mfr. No: | SSM14N956L,EFF |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm |
| Lifecycle: | Active |
| Datasheet: | SSM14N956L,EFF Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 1.57mA |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.33W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 14-SMD, No Lead |
| Supplier Device Package | TCSPED-302701 |
| Packaging | Reel |
| Standard Pack Qty | 10000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SSM14N956L,EFF from Toshiba falls under the mosfets category. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 12V, current, continuous drain (id) @ 25°C: 20A (Ta) and rds on (max) @ id, vgs: 1.35mOhm @ 10A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SSM14N956L,EFF is available through Simplytronix, sourced and verified for authenticity.