| Mfr. No: | SSM6J212FE,LF |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW |
| Datasheet: | SSM6J212FE,LF Datasheet (PDF) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 40.7mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 14.1 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 |
| Package / Case | SOT-563, SOT-666 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
The SSM6J212FE,LF, made by Toshiba, belongs to the mosfets product category. Technical specifications for this part include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 4A (Ta), drive voltage: 1.5V, 4.5V and rds on (max) @ id, vgs: 40.7mOhm @ 3A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SSM6J212FE,LF for same-day shipping with genuine parts guaranteed.