| Mfr. No: | SSM6K781G,LF |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs WCSP6C S-MOS TRSTR Pd=0mW F=1MHz |
| Lifecycle: | Active |
| Datasheet: | SSM6K781G,LF Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 6 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WCSPC (1.5x1.0) |
| Package / Case | 6-UFBGA, WLCSP |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
SSM6K781G,LF is a mosfets part produced by Toshiba for use across a range of applications. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 12 V, current, continuous drain (id) @ 25°C: 7A (Ta), drive voltage: 1.5V, 4.5V and rds on (max) @ id, vgs: 18mOhm @ 1.5A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM6K781G,LF from Simplytronix for authenticated stock and same-day order processing.