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SSM6L14FE(TE85L,F) Toshiba
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SSM6L14FE(TE85L,F)

Mfr. No: SSM6L14FE(TE85L,F)
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs LowON Res MOSFET ID=0.8A VDSS=20V
Lifecycle: Active
Datasheet: SSM6L14FE(TE85L,F) Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta), 720mA (Ta)
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 10V, 110pF @ 10V
Power - Max 150mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,937
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

SSM6L14FE(TE85L,F) is a mosfets part produced by Toshiba for use across a range of applications. This component is defined by technology: MOSFET (Metal Oxide), configuration: N and P-Channel, FET feature: Logic Level Gate, 1.5V Drive, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 800mA (Ta), 720mA (Ta) and rds on (max) @ id, vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM6L14FE(TE85L,F) from Simplytronix for authenticated stock and same-day order processing.

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