*For representation only.
SSM6N16FE,L3F
| Mfr. No: | SSM6N16FE,L3F |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs Sm-signal/HiSpeed2n1 ES6 (SOT-563) |
| Datasheet: | SSM6N16FE,L3F Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
| Power - Max | 150mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 8000 |
6,722
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The SSM6N16FE,L3F from Toshiba falls under the mosfets category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 100mA (Ta) and rds on (max) @ id, vgs: 3Ohm @ 10mA, 4V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SSM6N16FE,L3F is available through Simplytronix, sourced and verified for authenticity.
